GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.

The global GaN RF Devices market was valued at US$ million in 2023 and is anticipated to reach US$ million by 2030, witnessing a CAGR of % during the forecast period 2024-2030.

In terms of geographical regions, North America will be the major revenue contributor to the market throughout the next five years. The increasing applications of GaN RF devices in the defense sector, the large-scale expansion of 4G networks, and the introduction of 5G, will fuel the growth of the market. Moreover, the presence of a number of GaN RF device vendors in North America and the demand for better powered chips in the consumer, defense, and connected devices sectors, will also drive the market’s growth prospects in this region.

This report aims to provide a comprehensive presentation of the global market for GaN RF Devices, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding GaN RF Devices.

Report Scope

The GaN RF Devices market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global GaN RF Devices market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.

For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.

The report will help the GaN RF Devices manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.

Market Segmentation


By Company


GAN Systems

Infineon Technologies

NXP Semiconductors

Texas Instruments

Toshiba

Qorvo

Cree

Avago Technologies

Fujitsu Semiconductor

MACOM

Microchip Technology

Sumitomo Electric Device

ST-Ericsson

United Monolithic Semiconductors (UMS)

WIN Semiconductors


Segment by Type


RF Front-End Equipment

RF Terminal Equipment


Segment by Application


Consumer Electronics

Industrial Use

Aerospace and Defense

Other


Production by Region



North America

Europe

China

Japan

South Korea


Consumption by Region


North America

U.S.

Canada

Europe

Germany

France

U.K.

Italy

Russia

Asia-Pacific

China

Japan

South Korea

China Taiwan

Southeast Asia

India

Latin America, Middle East & Africa

Mexico

Brazil

Turkey

GCC Countries

Chapter Outline

Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Type, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.

Chapter 2: Detailed analysis of GaN RF Devices manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.

Chapter 3: Production/output, value of GaN RF Devices by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.

Chapter 4: Consumption of GaN RF Devices in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.

Chapter 5: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.

Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.

Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.

Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.

Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.

Chapter 10: The main points and conclusions of the report.